Manipulation of chemically amplified resist dissolution rate behavior for improved performance

Medhat A. Toukhy; Karin R. Schlicht; Brian Maxwell; Somboun Chanthalyma

doi:10.1117/12.388349

23 June 2000 Manipulation of chemically amplified resist dissolution rate behavior for improved performance

Medhat A. Toukhy, Karin R. Schlicht, Brian Maxwell, Somboun Chanthalyma

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388349
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The properties of the PAG and the type of the blocking group combined with the process temperature affect the slope of the dissolution rate curves within the critical lithographic area of the curve significantly. The location of the steepest dissolution rate switching and the photospeed of the resist are primarily a function of the PAG type and base ratio. The resist inhibition is largely influenced by the blocking level of the polymer. The total phenolic (OH) content of de-blocked polyhydroxystyrene (PHS) based resist systems is the only parameter that affects their maximum dissolution rate (R_max).

Citation Download Citation

Medhat A. Toukhy, Karin R. Schlicht, Brian Maxwell, and Somboun Chanthalyma "Manipulation of chemically amplified resist dissolution rate behavior for improved performance", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388349

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