Novel polymers for 193-nm single-layer resist based on cycloolefin polymers

Hyun-Woo Kim; Si-Hyeung Lee; Ki-Young Kwon; Dong-Won Jung; Sook Lee; Kwang-Sub Yoon; Sang-Jun Choi; Sang-Gyun Woo; Joo-Tae Moon

doi:10.1117/12.388273

23 June 2000 Novel polymers for 193-nm single-layer resist based on cycloolefin polymers

Hyun-Woo Kim, Si-Hyeung Lee, Ki-Young Kwon, Dong-Won Jung, Sook Lee, Kwang-Sub Yoon, Sang-Jun Choi, Sang-Gyun Woo, Joo-Tae Moon

Author Affiliations +

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388273
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

A series of new cycloaliphatic olefin monomers protected by alicyclic hydrocarbon groups were synthesized. New polymers of cycloaliphatic olefins and cycloolefin-maleic anhydride (COMA) systems were also designed and prepared using the new monomers for 193 nm resist applications. These polymers were synthesized by free radical polymerization technique, utilizing azobisisobutyronitrile (AIBN) or di-t-butyl peroxide initiators. The cycloolefin polymers synthesized by free radical polymerization method were not good for ArF lithography because of their poor transparency at 193 nm, although they showed a good dry etch resistance. However, the new COMA polymers had good transparency at 193 nm and had an etch rate in CF₄ mixture plasma of approximate 1.0 times that of DUV resists. Using ArF exposure tools (NA equals 0.6, (sigma) equals 0.7), 130 nm line/space patterns were resolved. Using Off-Axis illumination, 100 nm line/space patterns were resolved.

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Hyun-Woo Kim, Si-Hyeung Lee, Ki-Young Kwon, Dong-Won Jung, Sook Lee, Kwang-Sub Yoon, Sang-Jun Choi, Sang-Gyun Woo, and Joo-Tae Moon "Novel polymers for 193-nm single-layer resist based on cycloolefin polymers", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388273

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