Advanced F2 lasers for microlithography

Klaus Vogler; Uwe Stamm; Igor Bragin; Frank Voss; Sergei V. Govorkov; Gongxue Hua; Juergen Kleinschmidt; Rainer Paetzel

doi:10.1117/12.388991

5 July 2000 Advanced F₂ lasers for microlithography

Klaus Vogler, Uwe Stamm, Igor Bragin, Frank Voss, Sergei V. Govorkov, Gongxue Hua, Juergen Kleinschmidt, Rainer Paetzel

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388991
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

According to the SIA-Roadmap, the 157 nm wavelength of the F₂ laser emission will be used for chip production with critical dimensions of 100 nm down tot eh 70 nm node. Currently al basic technologies for 157 nm lithography are under investigation and development at material suppliers, coating manufacturers, laser suppliers, lens and tool manufacturers, mask houses, pellicle manufacturers, and resist suppliers.

Citation Download Citation

Klaus Vogler, Uwe Stamm, Igor Bragin, Frank Voss, Sergei V. Govorkov, Gongxue Hua, Juergen Kleinschmidt, and Rainer Paetzel "Advanced F₂ lasers for microlithography", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388991

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