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5 July 2000 Advanced mix-and-match using a high-NA i-line scanner
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Step and Scan technology has matured for the current generation of semiconductor lithography tools and has become the standard for most new fabs and fab expansions. It is estimated that for the year 1999, more than 64 percent of new exposure tool shipments from all vendors were step and scan platforms. For economical mass production in sub 180 nm applications, DUV and i-line lithography have to be combined with critical layers that are exposure during DUV. Semi- critical and non-critical layers are exposed using i-line. The choice to use a stepper ora scanner for the i-line platform becomes critical in terms of operating cost and technical capability. This paper reports on the performance of high resolution, high throughput i-line scanners that are used in mix and match with DUV scanners. Advanced imaging capability is demonstrated on the ASML PAS 5500/400 i-line scanner as well as alignment performance on the most difficult layers using the ATHENA advanced alignment system. Matching strategies are presented along with a cost analysis showing the merits of using i-line scanners for semi- critical and non-critical layers in mix and match.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Pieter Kuijten, Thomas A. Harris, Ludo van der Heijden, David Witko, John Cossins, James Foster, and Douglas R. Ritchie "Advanced mix-and-match using a high-NA i-line scanner", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000);

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