Depth-of-focus enhancement of isolated lines by multiple-focus exposure with negative-tone resist process

Masashi Fujimoto; Tamio Yamazaki; Takeo Hashimoto

doi:10.1117/12.388946

5 July 2000 Depth-of-focus enhancement of isolated lines by multiple-focus exposure with negative-tone resist process

Masashi Fujimoto, Tamio Yamazaki, Takeo Hashimoto

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388946
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

To enhance the depth-of-focus (DOF) of isolated lines, we have developed a new method using multiple-focus exposure in the negative-tone resist process. Experiments were performed using a KrF scanner by giving a tilt offset between the image focal plane and the wafer leveling plane along the scan direction. Using this new method, we obtained 0.75- micrometers DOF for a 180-nm isolate line, which was much larger than that in the conventional exposure. Furthermore, we evaluated the common DOF for 180-nm lines having five different pitches. Our method improved the DOF of not only isolated lines but also lines having various pitches.

Citation Download Citation

Masashi Fujimoto, Tamio Yamazaki, and Takeo Hashimoto "Depth-of-focus enhancement of isolated lines by multiple-focus exposure with negative-tone resist process", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388946

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