Exposure latitude analysis for dense line and space patterns by using diffused aerial image model

Chang-Nam Ahn; Hee-Bom Kim; Ki-Ho Baik

doi:10.1117/12.389058

Translator Disclaimer

5 July 2000 Exposure latitude analysis for dense line and space patterns by using diffused aerial image model

Chang-Nam Ahn, Hee-Bom Kim, Ki-Ho Baik

Author Affiliations +

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389058
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Ultimate limitation of lithography has been studied by using the diffused aerial image model (DAIM). Assuming that only the 0th and 1st order diffraction beams in the off-axis illumination technique contribute to the resist patterns, aerial image is calculated for dense line and space patterns. And then DAIM is applied to achieve final image. By using this diffused aerial image, exposure latitude and mask error effect can be analyzed quantitatively. In the case of perfect image, which can be achieved from, for example, diffraction free x-ray lithography or electron beam lithography without Coulomb repulsion and back scattering effect, same approaches are possible to get the exposure latitude and mask error effect. Under the validation of DAIM, most important parameter, which characterizes dense L/S patterns, is the diffusion length of acid. In order to realize sub-o.1 micrometers pattern with enough process margins, it is required to enlarge exposure latitude and to reduce mask error effect. Therefore, reducing h acid diffusion length of chemical amplification resist (CAR) or new conceptual resist instead of CAR will be needed for sub-0.1 micrometers era.

Citation Download Citation

Chang-Nam Ahn, Hee-Bom Kim, and Ki-Ho Baik "Exposure latitude analysis for dense line and space patterns by using diffused aerial image model", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389058

ACCESS THE FULL ARTICLE