Paper
5 July 2000 Factors affecting pitch bias in lithography simulation
Stewart A. Robertson, Edward K. Pavelchek, Catherine I. Swible-Keane, John F. Bohland, Michael T. Reilly
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Abstract
The ability of a commercial lithography simulator to accurately predict the pitch dependent print bias of a conventional i-line resist is investigated, under conventional and annular illumination schemes for two critical geometries. The influence of the simulator settings and resist modeling parameters on the observed bias are determined. The result reveal that the simulation predictions are qualitatively, but not quantitatively, reflective of experimental data and are remarkably insensitive to changes in either the simulator settings or the parameters used to describe the resist process.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stewart A. Robertson, Edward K. Pavelchek, Catherine I. Swible-Keane, John F. Bohland, and Michael T. Reilly "Factors affecting pitch bias in lithography simulation", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389067
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Diffusion

Lithography

Data modeling

Photoresist processing

Lithographic illumination

Optical proximity correction

Reflectivity

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