Paper
5 July 2000 Influence of resist process on the best focus shift due to lens spherical aberration
Author Affiliations +
Abstract
The influence of spherical aberration on imaging performance was evaluated by resist simulation for various resist thicknesses and other resist parameters. The best focus variation in terms of pattern size in L and S was not appropriate as a lithographic criterion because it varied not only with pattern size but also with resist characteristics and thickness. General rules for the best focus of L and S based on CD-defocus characteristics are proposed. The lithographic performance represented by the CD uniformity and the best focus variation of isolated patterns were predicted approximately from the result of aerial image calculation for ideal resist performance. In conclusion, the reduction in spherical aberration that leads to improved CD accuracy is not always achieved by the decrease in best focus shift.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seiji Matsuura, Takayuki Uchiyama, and Hiroyoshi Tanabe "Influence of resist process on the best focus shift due to lens spherical aberration", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388968
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Critical dimension metrology

Monochromatic aberrations

Lithography

Neodymium

Diffusion

Photomasks

Photoresist processing

RELATED CONTENT


Back to Top