Paper
5 July 2000 Integration of attenuated phase-shift mask to 0.13-μm technology contact level masking process
Lay Cheng Choo, O'Seo Park, Michael J. Sack, Siu Chung Tam
Author Affiliations +
Abstract
The attenuated phase shift mask has been sued to delineate 0.22 micrometers contact hole structures for 0.18micrometers technology. Using a scanner with a high NA of 0.68, this is equivalent to a k1 value of 0.60. As device shrinks down to 0.13 micrometers technology, 0.16 micrometers contact holes are to be printed with sufficient process latitudes. Using the existing high NA scanner, the k1 value is a low 0.44. Simulations were done using PROLITH/3D software, and the results show better performance for isolated holes. Higher mask transmissions are required to improve the aerial image of the dense holes. Experimentation was conducted to print 0.16micrometers contact holes using moderate and low (sigma) settings. 6 percent APSM was used with 0.16micrometers , 0.18micrometers and 0.20micrometers contact hole patterns biased by 0.04micrometers , 0.06micrometers and 0.08micrometers . Impact of these parameters on mask error enhancement factor were discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lay Cheng Choo, O'Seo Park, Michael J. Sack, and Siu Chung Tam "Integration of attenuated phase-shift mask to 0.13-μm technology contact level masking process", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388956
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Photomasks

Nanoimprint lithography

Phase shifts

Image transmission

Photomicroscopy

Scanners

Photoresist materials

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