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5 July 2000 Optimizing edge topography of alternating phase-shift masks using rigorous mask modeling
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This paper describes mask topography effects of alternating phase shift masks for DUV lithography. First two options to achieve intensity balancing are discussed. Global phase errors of +/- 10 degrees cause a CD change of 3 nm and 8 nm CD placement errors. The CD placement appears to be the parameter affected most by phase errors. A sloped quartz edge with an angle of 3 degrees causes a CD change of 10 nm. The CD sensitivity on local phase errors, i.e. quartz bumps or holes was also studied. The critical defect size of a quartz bump was seen to be 150 nm for 150 nm technology. For the investigation the recently developed topography simulator T-mask was used. The simulator was first checked against analytical tests and experimental results.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christoph M. Friedrich, Leonhard Mader, Andreas Erdmann, Steffen List, Ronald L. Gordon, Christian K. Kalus, Uwe A. Griesinger, Rainer Pforr, Josef Mathuni, Guenther G. Ruhl, and Wilhelm Maurer "Optimizing edge topography of alternating phase-shift masks using rigorous mask modeling", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000);

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