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5 July 2000 Precise control of critical dimension shrinkage and enlargement by in-situ polysilicon etch
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Abstract
The control of critical dimension shrinkage and enlargement of polysilicon line or space obtained precisely using in- situ process with different ratio of gas combination is investigate din this paper. A polysilicon line could be etched down to 0.054 micrometers from 0.22 micrometers of the original critical dimension (CD). The CD shrinking rate of polysilicon line is 2.48 nm per second per side. On the other hand, the space can also be trimmed down to 0.03 micrometers from the original CD of 0.3 micrometers . The CD enlarging rate of polysilicon rate is 0.421 nm per second per side using the present polymer deposition method. The factors that cause shrinkage and enlargement of CD are the etching of photoresist and the deposition of polymer on the surface of photoresist, respectively. The oxygen-rich gas is used for the shrinkage of CD and the fluorocarbon-rich gas is used for the enlargement of CD. Therefore, a critical dimension could not afforded by the present existed optical photolithography tool or method might probably be solved by alternative innovation such as the plasma dry etching technology.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kung Linliu and Mai-Rue Kuo "Precise control of critical dimension shrinkage and enlargement by in-situ polysilicon etch", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388929
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