Rigorous diffraction analysis for future mask technology

Andreas Erdmann; Christoph M. Friedrich

doi:10.1117/12.389060

5 July 2000 Rigorous diffraction analysis for future mask technology

Andreas Erdmann, Christoph M. Friedrich

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389060
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Advanced lithographic techniques such as phase shift masks (PSM) and optical proximity correction (OPC) result in a more complex mask design and technology. With shrinking feature sizes, the topography of the mask becomes more and more important. We compare diffraction spectra, aerial images and resist profiles, which result for rigorous simulations were performed with a time-domain finite- difference algorithm. Consequences with respect to process linearity, mask error factor, printability of small assist features in OPC and phase defects in PSM will be discussed.

Citation Download Citation

Andreas Erdmann and Christoph M. Friedrich "Rigorous diffraction analysis for future mask technology", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389060

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