Paper
5 July 2000 Simulation-based method for sidelobe supression
Christoph Dolainsky, Paul Karakatsanis, Fritz Gans, Rainer Pforr, Joerg Thiele
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Abstract
We present a new method of sidelobe suppressor placement based on fast lithographic simulation. Experimental results of printing 0.18 micron contact holes using a 5.5 percent transmittance attenuated phase shift mask with different settings of partial coherency are shown. Very asymmetric side lobes appear in some of these results. To explain these experimental results simulations were performed that take koma lens aberrations into account. A good agreement between experiment and simulation can be obtained them, Using these simulations a new algorithm has been implemented to place absorbing assist pattern for sidelobe suppression suitable in size and position. Then the process window of a double contact was determined using aerial image simulation. Process windows with koma lens aberrations and different settings of the partial coherency are then compared.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christoph Dolainsky, Paul Karakatsanis, Fritz Gans, Rainer Pforr, and Joerg Thiele "Simulation-based method for sidelobe supression", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388952
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Photomasks

Computer simulations

Lithography

Phase shifts

Printing

Image transmission

Optical proximity correction

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