Simulation-based method for sidelobe supression

Christoph Dolainsky; Paul Karakatsanis; Fritz Gans; Rainer Pforr; Joerg Thiele

doi:10.1117/12.388952

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5 July 2000 Simulation-based method for sidelobe supression

Christoph Dolainsky, Paul Karakatsanis, Fritz Gans, Rainer Pforr, Joerg Thiele

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Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388952
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

We present a new method of sidelobe suppressor placement based on fast lithographic simulation. Experimental results of printing 0.18 micron contact holes using a 5.5 percent transmittance attenuated phase shift mask with different settings of partial coherency are shown. Very asymmetric side lobes appear in some of these results. To explain these experimental results simulations were performed that take koma lens aberrations into account. A good agreement between experiment and simulation can be obtained them, Using these simulations a new algorithm has been implemented to place absorbing assist pattern for sidelobe suppression suitable in size and position. Then the process window of a double contact was determined using aerial image simulation. Process windows with koma lens aberrations and different settings of the partial coherency are then compared.

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Christoph Dolainsky, Paul Karakatsanis, Fritz Gans, Rainer Pforr, and Joerg Thiele "Simulation-based method for sidelobe supression", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388952

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