Strategy for optimizing random code lithography patterning in 0.18-um generation mask ROM

Chih-Ping Chen; Shun-Li Lin; Ta-Hung Yang

doi:10.1117/12.389089

5 July 2000 Strategy for optimizing random code lithography patterning in 0.18-μm generation mask ROM

Chih-Ping Chen, Shun-Li Lin, Ta-Hung Yang

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389089
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Among the non-volatize memory family, Mask ROM is the most cost competed product that wildly adopted in data storage application. The mask ROM based on the 0.18 um technology generation is pushed to production in most of the advanced fabs that use KrF lithography. There are two critical steps in the process flow layer. Most of the existing studies deal with the small geometry poly patterning. The other challenge is to deal with random code implant layer. However, few studies have been done on the related problems.

Citation Download Citation

Chih-Ping Chen, Shun-Li Lin, and Ta-Hung Yang "Strategy for optimizing random code lithography patterning in 0.18-μm generation mask ROM", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389089

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