Evaluation of cryogenic readout circuits with GaAs JFETs for far-infrared detectors

Kenichi Okumura; Iwao Hosako; Makoto Akiba; Norihisa Hiromoto

doi:10.1117/12.395505

16 August 2000 Evaluation of cryogenic readout circuits with GaAs JFETs for far-infrared detectors

Kenichi Okumura, Iwao Hosako, Makoto Akiba, Norihisa Hiromoto

Proceedings Volume 4008, Optical and IR Telescope Instrumentation and Detectors; (2000) https://doi.org/10.1117/12.395505
Event: Astronomical Telescopes and Instrumentation, 2000, Munich, Germany

Abstract

The characteristics of gallium arsenide junction field- effect transistors (GaAs JFETs) and the performance of cryogenic readout circuits using GaAs JFETs with various gate sizes ranging form W/L equals 5micrometers /0.5micrometers to 200micrometers /200micrometers to systematically measure their static characteristics and low-frequency noise spectra. We found that the low-frequency noise voltage depends on the device size in the saturation region of GaAs JFETs at 4.2 K, and the power density of the noise voltage is inversely proportional to the gate are. These findings allowed us to determine the Hooge parameter of the GaAs JFET at 4.2 K to be 4 by 10^-5, assuming that the carrier mobility is 1.5 by 10³ cm²/Vs. On the other hand, we did not find the obvious correlation between the low-frequency noise and gate size in the ohmic region of GaAs JFETs. Based on these measurements for GaAs JFETs, we fabricated and tested a dual GaAs JFET, a source-follower-per-detector (SFD) circuit, and a 20 by 3 channel SFD circuit array. The Common-Mode-Rejection-Ratio (CMRR) of the dual GaAs JFET with W/L equals 50micrometers /20micrometers at 4.2 K was determined to be 40-60 dB under small power dissipation. The performance of SFD circuits and 20 by 3 channel SFD arrays for 2D far-IR Ge:Ga detector readouts are currently being evaluated.

Citation Download Citation

Kenichi Okumura, Iwao Hosako, Makoto Akiba, and Norihisa Hiromoto "Evaluation of cryogenic readout circuits with GaAs JFETs for far-infrared detectors", Proc. SPIE 4008, Optical and IR Telescope Instrumentation and Detectors, (16 August 2000); https://doi.org/10.1117/12.395505

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