Comparison of laser technology and RTA on Pt/Sn/Pd ohmic contacts to GaAs

Jan Zlamal; Petr Machac; Vladimir Myslik

doi:10.1117/12.373647

29 December 1999 Comparison of laser technology and RTA on Pt/Sn/Pd ohmic contacts to GaAs

Jan Zlamal, Petr Machac, Vladimir Myslik

Proceedings Volume 4016, Photonics, Devices, and Systems; (1999) https://doi.org/10.1117/12.373647
Event: Photonics Prague '99, 1999, Prague, Czech Republic

Abstract

In this paper we have studied the performance of Pt/Sn/Pd contact structures on n+)-GaAs plates. An absorbing cap layer is necessary to use in the case of a laser annealing. Pt layer deposited by sputtering with the thickness of 12 nm gives the best parameters. The semiconductors plates were cleaned prior the deposition of metallization by various solutions, the lowest contact resistance was obtained in the case of H₂O₂:NH₄OH:H₂O. The laser annealing was compared with RTA method, which was not suitable for this contact structure.

Citation Download Citation

Jan Zlamal, Petr Machac, and Vladimir Myslik "Comparison of laser technology and RTA on Pt/Sn/Pd ohmic contacts to GaAs", Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); https://doi.org/10.1117/12.373647

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