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29 December 1999 Optical characterization of glass materials doped with rare-earth elements
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Proceedings Volume 4016, Photonics, Devices, and Systems; (1999)
Event: Photonics Prague '99, 1999, Prague, Czech Republic
Sulphide glasses of GeGaS and GeGaAsS systems doped with rare earth ions are promising materials for various photonic applications. Because the solubility of rare earth elements ins influenced by the purity of host glass, namely by OH group concentration, the attention has been paid to the preparation of highly pure and homogeneous undoped and rare earth doped glasses. Particularly the systems Ge0.25Ga0.1-xS0.65Prx and Ge0.25Ga0.05- xAs0.05S0.65Prx with x equals 500, 1000, 3000, 6000 wt. ppm have been prepared. Synthesized materials system have been characterized by Raman and low-temperature photoluminescence spectroscopies. The optical Pr concentration has been found to be around 1000 wt.ppm. The appearance of temperature induced radiative transitions have been observed on GeGaS:Er samples.
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Jiri Zavadil, Dimitrij Lezal, and Olga Prochazkova "Optical characterization of glass materials doped with rare-earth elements", Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999);

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