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29 December 1999 Silicon-based materials for optoelectronics: visible photoluminescence and electroluminescence from amorphous silicon
Juraj Dian, Jan Valenta, A. Poruba, Pavel Horvath, Katerina Luterova, Petr Fojtik, Ivan Pelant
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Proceedings Volume 4016, Photonics, Devices, and Systems; (1999) https://doi.org/10.1117/12.373675
Event: Photonics Prague '99, 1999, Prague, Czech Republic
Abstract
Room temperature visible photoluminescence (PL) and electroluminescence (EL) of wide band gap hydrogenated amorphous silicon thin films prepared in SiH4 microwave plasma strongly diluted with He is reported. The emission spectra are peaked at approximately 1.5 eV. Films were characterized by means of optical and IR absorption and hydrogen thermal desorption. The band gap of a-Si:H films varies within the interval 2.0-2.2 eV. The strong evidence for two distinct types of PL processes is presented: one being linked with oligosilanes and the second one attributed to electron-hole recombination in tail states. EL has been investigated in p-i-n and p+-p-n-n+ structures with CrNi/ITO contacts. The EL occurs after initial forming in reverse bias only and its external quantum efficiency is approximately 10-5 percent. The shape and spectral position of EL spectra suggest that the light emission in this case is probably due to simultaneous excitation of the oligosilane units and impact ionization by hot electrons.
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Juraj Dian, Jan Valenta, A. Poruba, Pavel Horvath, Katerina Luterova, Petr Fojtik, and Ivan Pelant "Silicon-based materials for optoelectronics: visible photoluminescence and electroluminescence from amorphous silicon", Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); https://doi.org/10.1117/12.373675
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KEYWORDS
Electroluminescence
Silicon
Hydrogen
Luminescence
Visible radiation
Absorption
Amorphous silicon
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