Modeling, design, and test of a monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system

C. Rubio; Sebastian A. Bota; J. G. Macias; Josep Samitier

doi:10.1117/12.382283

10 April 2000 Modeling, design, and test of a monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system

C. Rubio, Sebastian A. Bota, J. G. Macias, Josep Samitier

Author Affiliations +

Proceedings Volume 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS; (2000) https://doi.org/10.1117/12.382283
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS, 2000, Paris, France

Abstract

A magnetic field-to-voltage converter using a magnetic MOSFET devices has been designed, simulated and tested. The resulting sensor was measured under magnetic fields ranging from 0 to 0.8T, the obtained sensitivity was 0.03T^-1 with an offset lower than 0.2 percent. SPICE macro model for the MAGFET in the saturation region is presented. Also, we have simulated the behavior of the specific A/D system, based on a current-mode technique, making use of high description language.

Citation Download Citation

C. Rubio, Sebastian A. Bota, J. G. Macias, and Josep Samitier "Modeling, design, and test of a monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system", Proc. SPIE 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS, (10 April 2000); https://doi.org/10.1117/12.382283

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