Test structures for CMOS-compatible silicon pressure sensor reliability characterization

Enric Montane; Sebastian A. Bota; Santiago Marco; M. Carmona; Josep Samitier

doi:10.1117/12.382301

10 April 2000 Test structures for CMOS-compatible silicon pressure sensor reliability characterization

Enric Montane, Sebastian A. Bota, Santiago Marco, M. Carmona, Josep Samitier

Proceedings Volume 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS; (2000) https://doi.org/10.1117/12.382301
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS, 2000, Paris, France

Abstract

Pressure sensors structures have been fabricated in a commercial CMOS foundry technology using a post-processing for back-side wafer micro machining. In order to predict the sensor response to an externally applied differential pressure, the structure behavior has been simulated by Finite Element Methods. The design and fabrication of test structures for these sensor devices is described. Experimental results obtained using these structures are presented.

Citation Download Citation

Enric Montane, Sebastian A. Bota, Santiago Marco, M. Carmona, and Josep Samitier "Test structures for CMOS-compatible silicon pressure sensor reliability characterization", Proc. SPIE 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS, (10 April 2000); https://doi.org/10.1117/12.382301

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