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17 July 2000 InAsSb and InGaAs linear and focal plane arrays
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Abstract
Short-wave IR and mid-IR photovoltaic detector arrays consisting of In(Ga)As and InAsSb were realized. Maximum array size is 256 X 256 elements on a 25 micron pitch. The layers were grown on 3' semi-insulating GaAs substrates by MBE thereby avoiding the need for substrate removal by wafer thinning after hybridization. A reliable and uniform detector process using improved wet-etching has been developed. The citric-acid based etch has been optimized for minimum underetch such that high fill factor is achieved even with a mesa-type process. Typical RoA products at room temperature are within a factor of 2 of the theoretical limit for bulk leakage currents. The hybridization with silicon readout circuits consisted of Si-postprocessing by electroless plating or lithographic definition of Ni/Au, indium bump electroplating on the III-V chip and flip-chip integration with individual indium bumps. The indium bump process resulted in 13 micron diameter solderbumps which allows pixel pitches below 20 micron.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Merken, Lars Zimmermann, Joachim John, Stefan Nemeth, Martin Gastal, Gustaaf Borghs, and Chris A. Van Hoof "InAsSb and InGaAs linear and focal plane arrays", Proc. SPIE 4028, Infrared Detectors and Focal Plane Arrays VI, (17 July 2000); https://doi.org/10.1117/12.391737
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