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17 July 2000 InSb focal plane array (FPAs) grown by molecular beam epitaxy (MBE)
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Abstract
Staring InSb FPAs grown by MBE have been demonstrated. Low growth temperatures have been employed to provide p+-n- n+ photodiodes with a dark, 80 K ROA equals 9 X 105(Omega) cm2. A degenerately doped substrate has been used to provide transparency in the 3.5 micrometer - 5.5 micrometer spectral region. Free carrier absorption necessitates some thinning of the substrate and an anti- reflection coated external quantum efficiency of 62% has been achieved with a final thickness of approximately equals 40 micrometer. 320 X 256 FPA's operating at 90 K and looking at a 295 K scene in f/2 have a noise equivalent temperature (NE(Delta) T) at half well of 10.4 mK. FPA operability exceeds 99.7%.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tim Ashley, Ian M. Baker, Theresa M. Burke, David T. Dutton, John A. Haigh, Leslie G. Hipwood, Richard Jefferies, Alan David Johnson, Peter Knowles, and J. Chris Little "InSb focal plane array (FPAs) grown by molecular beam epitaxy (MBE)", Proc. SPIE 4028, Infrared Detectors and Focal Plane Arrays VI, (17 July 2000); https://doi.org/10.1117/12.391753
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