2DEG channel-dependent model for Hg1-xCdxTe-based pseudomorphic HEMTs

Hang-Ming Dai; Thomas J. Sanders

doi:10.1117/12.391910

18 July 2000 2DEG channel-dependent model for Hg_1-xCd_xTe-based pseudomorphic HEMTs

Hang-Ming Dai, Thomas J. Sanders

Proceedings Volume 4042, Enabling Photonic Technologies for Aerospace Applications II; (2000) https://doi.org/10.1117/12.391910
Event: AeroSense 2000, 2000, Orlando, FL, United States

Abstract

HgCdTe has emerged as an important electronic material because of its IRFPA applications. Technologies for growing the material are advanced and current sources for the material are more readily available than in the past. This brings an advantage to the manufacturing other types of HgCdTe devices. PHEMTs are attractive as applications of high-speed devices. In this paper, a model for PHEMT devices by using Hg_1-xCd_xTe as device materials is presented. High digital performance of the device is expected because electron mobility of the material is very high at low temperatures.

Citation Download Citation

Hang-Ming Dai and Thomas J. Sanders "2DEG channel-dependent model for Hg_1-xCd_xTe-based pseudomorphic HEMTs", Proc. SPIE 4042, Enabling Photonic Technologies for Aerospace Applications II, (18 July 2000); https://doi.org/10.1117/12.391910

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