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6 September 2000 Laser-ablated thin films of infinite-layer compounds and related materials
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Abstract
We report laser-ablation studies of highly-oriented thin films of the electron-doped infinite-layer copper-oxide compounds Sr1- xLaxCuO2. The primary synthesis variables were substrate or buffer layer material, temperature, laser fluence, target- substrate distance, and oxygen pressure. The films were characterized by x-ray diffraction, atomic force microscopy (AFM), Rutherford back-scattering (RBS), and electrical resistivity. Films were deposited on strontium titanate (001) or on buffer layers of T'-phase copper oxides, Ln2CuO4 (Ln equals Pr, Sm) on SrTiO3 (001). The in-plane lattice constants of such T'-phase materials (a equals 0.391 - 0.396 nm) could provide a structure more amenable to electron doping than strontium titanate (a equals 0.390 nm). Extremely flat buffer layers were obtained from stoichiometric targets of Sm2CuO4 and Pr2CuO4. However, ablation from stoichiometric infinite-layer targets onto buffer layers resulted in mixtures of infinite-layer and chain/ladder phases. Non-stoichiometric deposition was confirmed by RBS analysis. We thus utilized non-stoichiometric targets to obtain single-phased infinite-layer films. The x-ray rocking curves of highly-oriented epitaxial infinite-layer films exhibited full- widths at half maximum as narrow as 0.05 degrees. Infinite-layer films grown on T'-phase buffer layers exhibited lattice constants closer to those of the bulk superconductor than films grown directly on SrTiO3.
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John T. Markert, Troy C. Messina, Bernard Dam, Jeroen Huijbregste, Jan H. Rector, and Ronald Griessen "Laser-ablated thin films of infinite-layer compounds and related materials", Proc. SPIE 4058, Superconducting and Related Oxides: Physics and Nanoengineering IV, (6 September 2000); https://doi.org/10.1117/12.397832
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