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6 September 2000 Modified ferroelectric properties of the single c-domain/single crystal PbTiO3 thin films with tightly bonded interface
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Abstract
Continuous single c-domain/single crystal thin films of PbTiO3 (PT), 10 to 300 nm in film thickness, were epitaxially grown on the miscut (001)SrTiO3 substrates. The PT thin films were grown under a step-flow growth and their surface was atomically flat. The interface between thin films and the substrates were coherent. These sputtered PT thin films were tetragonally deformed by the thin films were tightly bonded to the substrates. The lattice parameters did not change at the Curie temperature. The PT thin films exhibited modified ferroelectric properties and/or second order like ferro-paraelectric phase transition. The PT thin films exhibited a diffused peak at the Curie temperature of 520 degrees Celsius. The P/E hysteresis curve showed a sharp switching property with a rectangular pattern and a high coercive field of 400 to 500 kV/cm.
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Kiyotaka Wasa, Ryuta Ai, Goh Asayama, Yoko Ichikawa, and Hideaki Adachi "Modified ferroelectric properties of the single c-domain/single crystal PbTiO3 thin films with tightly bonded interface", Proc. SPIE 4058, Superconducting and Related Oxides: Physics and Nanoengineering IV, (6 September 2000); https://doi.org/10.1117/12.397846
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