Paper
14 January 2000 Femtosecond time-resolved study of dynamic laser-induced nonequilibrium grating in Si films
Mansur F. Galyautdinov, V. S. Lobkov, S. A. Moiseev, I. V. Negrashov
Author Affiliations +
Proceedings Volume 4061, IRQO '99: Quantum Optics; (2000) https://doi.org/10.1117/12.375342
Event: Eighth International Readings on Quantum Optics: IRQO '99, 1999, Kazan, Russian Federation
Abstract
Kinetics of the decay of a dynamical grating formed by nonequilibrium charge carries in thin monocrystalline silicon films under femtosecond laser excitation are studied. A case of limiting concentration of charge carriers is analyzed. Contributions of ambipolar diffusion and Auger- recombination in the decay of a dynamical grating are estimated. At high intensities an effect of the long-lived dynamical grating is discovered.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mansur F. Galyautdinov, V. S. Lobkov, S. A. Moiseev, and I. V. Negrashov "Femtosecond time-resolved study of dynamic laser-induced nonequilibrium grating in Si films", Proc. SPIE 4061, IRQO '99: Quantum Optics, (14 January 2000); https://doi.org/10.1117/12.375342
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KEYWORDS
Femtosecond phenomena

Silicon

Diffraction

Diffraction gratings

Diffusion

Picosecond phenomena

Semiconductors

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