Statistical many-dimensional simulation of VLSI technology based on response surface methodology

Maxim V. Kazitov; Wieslaw B. Kuzmicz; Vladislav V. Nelayev; Viktor R. Stempitsky

doi:10.1117/12.375423

25 January 2000 Statistical many-dimensional simulation of VLSI technology based on response surface methodology

Maxim V. Kazitov, Wieslaw B. Kuzmicz, Vladislav V. Nelayev, Viktor R. Stempitsky

Proceedings Volume 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2000) https://doi.org/10.1117/12.375423
Event: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1999, St. Petersburg, Russian Federation

Abstract

With increasing IC packing density IC manufacturing processes are becoming more and more complex and tolerances of process parameters more critical for production yield and product reliability, and thus the economic viability of the IC manufacturing. At the same time IC structures can no longer be treated as 1D or even 2D. Therefore statistical multi-dimensional simulation of IC technology accounting for fluctuations of process parameters becomes more and more important. We present preliminary results of the statistical performance of the response surface methodology applied to numerical process and device simulation for the evaluation of the influence of random process fluctuations on the device performance.

Citation Download Citation

Maxim V. Kazitov, Wieslaw B. Kuzmicz, Vladislav V. Nelayev, and Viktor R. Stempitsky "Statistical many-dimensional simulation of VLSI technology based on response surface methodology", Proc. SPIE 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (25 January 2000); https://doi.org/10.1117/12.375423

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