Defect-strain instability and formation of periodic ablation structure on semiconductor surface under the action of ultrashort laser pulses

Vladimir I. Emel'yanov; Denis V. Babak

doi:10.1117/12.407311

16 August 2000 Defect-strain instability and formation of periodic ablation structure on semiconductor surface under the action of ultrashort laser pulses

Vladimir I. Emel'yanov, Denis V. Babak

Author Affiliations +

Proceedings Volume 4065, High-Power Laser Ablation III; (2000) https://doi.org/10.1117/12.407311
Event: High-Power Laser Ablation, 2000, Santa Fe, NM, United States

Abstract

The theory of defect-strain instability with formation of periodic surface relief in semiconductors irradiated by ultrashort ((tau) _p equals 10^-13 s) laser pulse is developed. The period and time of formation of surface relief are calculated. Regimes of multipulse laser ablation leading to formation of either smooth surface or arrays of surface relief spikes are considered and corresponding experimental results are interpreted from the viewpoint of the developed theory.

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Vladimir I. Emel'yanov and Denis V. Babak "Defect-strain instability and formation of periodic ablation structure on semiconductor surface under the action of ultrashort laser pulses", Proc. SPIE 4065, High-Power Laser Ablation III, (16 August 2000); https://doi.org/10.1117/12.407311

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