ArF halftone PSM cleaning process optimization for next-generation lithography

Yong-Seok Son; Seong-Ho Jeong; Jeong-Bae Kim; Hong-Seok Kim

doi:10.1117/12.392044

19 July 2000 ArF halftone PSM cleaning process optimization for next-generation lithography

Yong-Seok Son, Seong-Ho Jeong, Jeong-Bae Kim, Hong-Seok Kim

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392044
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

ArF lithography which is expected for the next generation optical lithography is adapted for 0.13 micrometers design-rule and beyond. ArF half-tone phase shift mask (HT PSM) will be applied as 1st generation of ArF lithography. Also ArF PSM cleaning demands by means of tighter controls related to phase angle, transmittance and contamination on the masks. Phase angle on ArF HT PSM should be controlled within at least +/- 3 degree and transmittance controlled within at least +/- 3 percent after cleaning process and pelliclization. In the cleaning process of HT PSM, requires not only the remove the particle on mask, but also control to half-tone material for metamorphosis. Contamination defects on the Qz of half tone type PSM is not easy to remove on the photomask surface. New technology and methods of cleaning will be developed in near future, but we try to get out for limit contamination on the mask, without variation of phase angle and transmittance after cleaning process.

Citation Download Citation

Yong-Seok Son, Seong-Ho Jeong, Jeong-Bae Kim, and Hong-Seok Kim "ArF halftone PSM cleaning process optimization for next-generation lithography", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392044

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