CA resist with high sensitivity and sub-100-nm resolution for advanced mask making

Wu-Song Huang; Ranee W. Kwong; John G. Hartley; Wayne M. Moreau; Marie Angelopoulos; Christopher Magg; Mark Lawliss

doi:10.1117/12.392026

19 July 2000 CA resist with high sensitivity and sub-100-nm resolution for advanced mask making

Wu-Song Huang, Ranee W. Kwong, John G. Hartley, Wayne M. Moreau, Marie Angelopoulos, Christopher Magg, Mark Lawliss

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392026
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

Recently, there is significant interest in using CA resist for electron beam (E-beam) applications including mask making, direct write, and projection printing. CA resists provide superior lithographic performance in comparison to traditional non-CA E-beam resist in particular high contrast, resolution, and sensitivity. However, most of the commercially available CA resist have the concern of airborne base contaminants and sensitivity to PAB and/or PEB temperatures. In this presentation, we will discuss a new improved ketal resists system referred to as KRS-XE which exhibits excellent lithography, is robust toward airborne base, compatible with 0.263N TMAH aqueous developer and exhibits excellent lithography, is robust toward airborne base, compatible with 0.263N TMAH aqueous developer and exhibits a large PAB/PEB latitude. With the combination of a high performance mask making E-beam exposure tool, high kV shaped beam system EL4+ and the KRS-XE resist, we have printed 75nm lines/space feature with excellent profile control at a dose of 13(mu) C/cm² at 75kV. The shaped beam vector scan system used here provides a unique property in resolving small features in lithography and throughput. Overhead in EL4+$ limits the systems ability to fully exploit the sensitivity of the new resist for throughput. The EL5 system has sufficiently low overhead that it is projected to print a 4X, 16G DRAM mask with OPC in under 3 hours with the CA resist. We will discuss the throughput advantages of the next generation EL5 system over the existing EL4+.

Citation Download Citation

Wu-Song Huang, Ranee W. Kwong, John G. Hartley, Wayne M. Moreau, Marie Angelopoulos, Christopher Magg, and Mark Lawliss "CA resist with high sensitivity and sub-100-nm resolution for advanced mask making", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392026

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