Paper
19 July 2000 CrOxFy as a material for attenuated phase-shift masks in ArF lithography
Keisuke Nakazawa, Takahiro Matsuo, Toshio Onodera, Hiroaki Morimoto, Hiroshi Mohri, Chiaki Hatsuta, Naoya Hayashi
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Abstract
We investigated the durability of CrOxFy film, which is used as a shifter for attenuated phase-shift masks (Att- PSMs), under ArF excimer laser irradiation. The phase shift of an as-deposited film decreased and the transmittance increased due to the disappearance of interfaces, which was caused by the migration of atoms. To improve durability, the sample was annealed at 300 degrees C to remove the interfaces, and the surface was etched to recover the decreased transmittance caused by the annealing. As a result, the lifetime became 1.5 years, which is sufficient for practical devices. The depth-of-focus of an ArF photoresist was 1.2 micrometers for a 0.13 micrometers line-and-space pattern and 0.5 micrometers for an 0.13 micrometers isolated contact- hole pattern when Att-PSMs made from CrOxFy film were used.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keisuke Nakazawa, Takahiro Matsuo, Toshio Onodera, Hiroaki Morimoto, Hiroshi Mohri, Chiaki Hatsuta, and Naoya Hayashi "CrOxFy as a material for attenuated phase-shift masks in ArF lithography", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392100
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CITATIONS
Cited by 2 scholarly publications and 4 patents.
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KEYWORDS
Transmittance

Photomasks

Phase shifts

Lithography

Annealing

Excimer lasers

Fluorine

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