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19 July 2000 Improvement of ZEP process for advanced mask fabrication
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Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000)
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan
In mask making, ZEP 7000 resist process with MEBES writing tool is widely adopted to produce advanced masks. This time, we tried to improve resist pattern CD uniformity in ZEP process using our special techniques. Resist sensitivity uniformity of mask blank is one of the most significant parameters for resist pattern CD uniformity. In ZEP7000 coating process, our original cooling method waw adopted in consideration of its resist sensitivity properties. Resist film thickness loss (RTL) uniformity during development was examined in order to analyze the resists sensitivity uniformity within a mask blank. It was clearly seen that resist pattern CD uniformity was 15nm with the optimum cooling condition. RTL uniformity and resist pattern CD uniformity were also examined using blanks which were commercially available from two vendors. And these results were compared with the results of our original cooling method. Based on the results of our study, we confirmed that our original cooling method was very effective for improvement of resist pattern CD uniformity on ZEP process.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuyuki Kushida, Youichi Usui, and Hisatsugu Shirai "Improvement of ZEP process for advanced mask fabrication", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000);


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