Paper
19 July 2000 Optical column of the mask-scan EB mask writer test stand
Naoharu Shimomura, Munehiro Ogasawara, Jun Takamatsu, Hitoshi Sunaoshi, Kiyoshi Hattori, Shusuke Yoshitake, Yuuji Fukudome, Kiminobu Akeno
Author Affiliations +
Abstract
A deficiency in throughput is one of the main problems for the post-100 nm generation mask writer. Mask-scan writing technology is one of the methods for increasing in the throughput. A large pattern is projected by scanning the electron beam over the mask pattern. We have developed a low aberration optical column to prove the concept of the mask- scan technology. We obtained the EB mask pattern image by scanning the electron beam over the mask. We confirmed the capability of the astigmatism correction by the bias voltage superposed on the main field deflectors.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naoharu Shimomura, Munehiro Ogasawara, Jun Takamatsu, Hitoshi Sunaoshi, Kiyoshi Hattori, Shusuke Yoshitake, Yuuji Fukudome, and Kiminobu Akeno "Optical column of the mask-scan EB mask writer test stand", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392076
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Electron beams

Monochromatic aberrations

Objectives

Vestigial sideband modulation

Electrodes

Silicon

RELATED CONTENT


Back to Top