Paper
23 February 2000 Power-related frequency shift determinations of an iodine-stabilized He-Ne laser at 633-nm wavelength by using a master-slave laser system
Gheorghe Popescu
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Proceedings Volume 4068, SIOEL '99: Sixth Symposium on Optoelectronics; (2000) https://doi.org/10.1117/12.378668
Event: SIOEL: Sixth Symposium of Optoelectronics, 1999, Bucharest, Romania
Abstract
The experimental results of the power-related frequency shift of an iodine-stabilized He-Ne laser with two methods of power variation: misalignment of the laser cavity and change of the polarization orientation between iodine cell and gain tube are reported. A small-power internal-mirror He-Ne laser PLL offset-locked to an iodine-stabilized He-Ne laser was used as the reference laser. The data were processed following three methods: the standard matrix method, the diagonal method and the reference line method. All three methods gave compatible result, but the diagonal method is taking advantage of collecting fewer data and being faster. Significant differences appeared among values of power-related frequency shifts, if the method of power variation was different, no matter the group of hfs components or method of data processing under consideration. For the same group of hfs components, deviations of less than 1 kHz may exist between frequency shifts computed by using the above mentioned methods of data processing, while the deviations between the frequency shifts calculated at the same power level do not exceed 2 kHz. This is regardless of groups of hfs components. BY contrary, differences up to about 14 kHz for a given group of hfs components were observed if the method used to get the power variation was different.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gheorghe Popescu "Power-related frequency shift determinations of an iodine-stabilized He-Ne laser at 633-nm wavelength by using a master-slave laser system", Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); https://doi.org/10.1117/12.378668
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