Parametric studies of carbon nitride thin films deposited by reactive pulsed laser ablation

S. Acquaviva; Emilia D'Anna; M. L. De Giorgi; Gilberto Leggieri; Armando Luches; Maurizio Martino; Alessio Perrone; A. Zocco; G. Barucca; Paolo Mengucci

doi:10.1117/12.378158

25 February 2000 Parametric studies of carbon nitride thin films deposited by reactive pulsed laser ablation

S. Acquaviva, Emilia D'Anna, M. L. De Giorgi, Gilberto Leggieri, Armando Luches, Maurizio Martino, Alessio Perrone, A. Zocco, G. Barucca, Paolo Mengucci

Author Affiliations +

Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378158
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy

Abstract

We report on parametric studies of CN_x films deposited by excimer laser ablation of graphite targets in molecular nitrogen atmosphere as a function of gas pressure and laser fluence values. Substrates were Si single crystals at room temperature. Deposition rates decrease with increasing nitrogen pressure. The N/C atomic ratio generally increases with increasing nitrogen pressure and laser fluence, N atoms are mainly bonded to C atoms in the sp² and sp³ bonding states. At relatively high pressure and laser fluences about 40 percent of the C atoms and about 50 percent of the N atoms are bounded in the C-N single bonds, generally attributed to the (beta) -C₃N₄ compound.

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S. Acquaviva, Emilia D'Anna, M. L. De Giorgi, Gilberto Leggieri, Armando Luches, Maurizio Martino, Alessio Perrone, A. Zocco, G. Barucca, and Paolo Mengucci "Parametric studies of carbon nitride thin films deposited by reactive pulsed laser ablation", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378158

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