UV laser ablation of silicon carbide ring surfaces for mechanical seal applications

Giuseppe Daurelio; Alida Bellosi; Diletta Sciti; Giuseppe Chita; Didio Allegretti; Fausto Guerrini

doi:10.1117/12.378170

25 February 2000 UV laser ablation of silicon carbide ring surfaces for mechanical seal applications

Giuseppe Daurelio, Alida Bellosi, Diletta Sciti, Giuseppe Chita, Didio Allegretti, Fausto Guerrini

Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378170
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy

Abstract

Silicon carbide ceramic seal rings are treated by KrF excimer laser irradiation. Surface characteristics, induced by laser treatment, depend upon laser fluence, the number of laser pulses, their energy and frequency, the rotation rate of the ring and the processing atmosphere. It was ascertained that silicon carbide has to be processed under an inert atmosphere to avoid surface oxidation. Microstructural analyses of surface and cross section of the laser processed samples showed that the SiC surface is covered by a scale due to the melting/resolidification processes. At high fluence there are no continuous scales on the surfaces; materials is removed by decomposition/vaporization and the ablation depth is linearly dependent on the number of pulses. Different surface morphologies are observed. The evolution of surface morphology and roughness is discussed with reference to compositions, microstructure and physical and optical properties of the ceramic material and to laser processing parameters. Preliminary results on tribological behavior of the treated seals are reported.

Citation Download Citation

Giuseppe Daurelio, Alida Bellosi, Diletta Sciti, Giuseppe Chita, Didio Allegretti, and Fausto Guerrini "UV laser ablation of silicon carbide ring surfaces for mechanical seal applications", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378170

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