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31 August 2000 Simultaneous measurement of bulk and surface recombination lifetimes on asymmetrical silicon samples
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Proceedings Volume 4076, Optical Diagnostics for Industrial Applications; (2000) https://doi.org/10.1117/12.397961
Event: Symposium on Applied Photonics, 2000, Glasgow, United Kingdom
Abstract
In this paper, a contractless, all-optical and non-destructive method for separating the minority carrier recombination lifetime and surface recombination velocities on assymetrical silicon samples (that is with different surface recombination velocities on the front and back surface) at low injection level is presented. The technique can be described as a pump-probe method where the excess carrier density is probed by analyzing free carrier absorption transient following excitation pulses having several wavelengths. A novel theoretical approach to evaluate the recombinative parameters is extensively analyzed and numerical simulations, which validate the proposed methodology, are presented.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luigi Sirleto, Andrea Irace, Gianpaolo F. Vitale, Luigi Zeni, and Antonello Cutolo "Simultaneous measurement of bulk and surface recombination lifetimes on asymmetrical silicon samples", Proc. SPIE 4076, Optical Diagnostics for Industrial Applications, (31 August 2000); https://doi.org/10.1117/12.397961
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