Conduction mechanisms in undoped polycrystalline diamond films

Hsueh-Tao Chou; Chia-Chang Lee; Chia-Hsin Sun

doi:10.1117/12.392107

11 July 2000 Conduction mechanisms in undoped polycrystalline diamond films

Hsueh-Tao Chou, Chia-Chang Lee, Chia-Hsin Sun

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392107
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

The unadopted polycrystalline diamond films are deposited on p-type silicon substrates by a microwave plasma chemical vapor deposition (MPCVD) system. The deposition conditions are CH_{4?/H(subscript 2}=0.5%, pressure equals 45 torr, power equals 2.2kW, and subtract temperature equals 885 degree(s)C. SEM was used to inspect the surface morphology, Raman Spectroscopy to determine the quality, and XPS to analyze the chemical composition. It in concluded that a cleaning procedure on diamond surfaces can eliminate the carbon phase but enhance the oxygenation on the films. The electrical characteristics were investigated by current-voltage-temperature measurements in a metal-insulator-semiconductor (MIS) structure with top metal contacts and back silicon substrates contacts. It can be found a transition electric field of 240 kV/cm, where Schottky emission (SE) mechanism is responsible for electric conduction below 240kV/cm, and Poole-Frenkel transport (PF) mechanism dominates beyond 240 kV/cm. By the extrapolations, the Schottky barrier height of silver and diamond film is 2.4 eV, and the tarp depth is 4.75 eV in the diamond film.

Citation Download Citation

Hsueh-Tao Chou, Chia-Chang Lee, and Chia-Hsin Sun "Conduction mechanisms in undoped polycrystalline diamond films", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392107

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