High-growth rate epitaxy of InN film by a novel-design MOCVD

FuhHsiang Yang; YingJay Yang; JihHsien Hwang; ChungHan Lee; KueiHsien Chen; ChingYen Lin

doi:10.1117/12.392179

11 July 2000 High-growth rate epitaxy of InN film by a novel-design MOCVD

FuhHsiang Yang, YingJay Yang, JihHsien Hwang, ChungHan Lee, KueiHsien Chen, ChingYen Lin

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392179
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

Indium nitride (InN) film was successfully grown on the Si(111)substrate. The growth rate of InN film can be enhanced about four times by a novel-designed MOCVD system with a NH₃ pre-cracking device, in which the NH₃ was fed through a quartz tube passing over a high temperature (650-850 degree(s)C) graphite. A maximum growth rate of about 6 (mu) m/hr in our system was achieved due to high cracking efficiency of NH₃. The growth temperature of substrate widely ranged from 350to 600 degree(s)C provides more flexible conditions to improve the film quality. The X-ray diffraction peaks of 31.7 degree(s) and 65.5 degree(s) were obtained from the (0002) and (0004) InN respectively, indicating (0001)-oriented hexagonal InN was epitaxially grown on the silicon(111) substrate.

Citation Download Citation

FuhHsiang Yang, YingJay Yang, JihHsien Hwang, ChungHan Lee, KueiHsien Chen, and ChingYen Lin "High-growth rate epitaxy of InN film by a novel-design MOCVD", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392179

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