Paper
11 July 2000 One-dimensional arrays of self-assembled InAs/InP quantum dots
Jacques Lefebvre, Philip J. Poole, John P. McCaffrey, Boris Lamontagne, Geof C. Aers, Chien-Ping Lee, ShuFen Hu, Robin L. Williams
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Abstract
The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacques Lefebvre, Philip J. Poole, John P. McCaffrey, Boris Lamontagne, Geof C. Aers, Chien-Ping Lee, ShuFen Hu, and Robin L. Williams "One-dimensional arrays of self-assembled InAs/InP quantum dots", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392132
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KEYWORDS
Quantum dots

Indium arsenide

Diffusion

Luminescence

Optical lithography

Scanning electron microscopy

Chemical species

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