Sensing characteristics of ISFET based on AlN thin film

Jung Lung Chiang; Shiun-Sheng Jan; Ying-Chung Chen; Jung Chuan Chou

doi:10.1117/12.392108

11 July 2000 Sensing characteristics of ISFET based on AlN thin film

Jung Lung Chiang, Shiun-Sheng Jan, Ying-Chung Chen, Jung Chuan Chou

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392108
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

In the past years, the aluminum nitride (AIN) thin films were usually applied to the surface acoustic wave (SAW) devices, optical devices in the ultraviolet spectral region, acousto-optic devices and integrated circuit packaging. In this study, we first selected the AIN thin film as gate insulator for pH sensing ISFET in our laboratory. We have studied the relationship between pH sensitivity and surface potential for AIN gate ISFET in the different solutions. And we also have obtained the pH characteristics from the capacitance-voltage (C-V) and current voltage (I-V) curves. Herein, we can obtain the shift of the linear region threshold voltage of the AIN/SiO₂ gate ISFET devices in the different buffer solutions. The AIN materials exhibited a high response, and the sensitivity was about 45~51 mV/pH. In addition, we have also compared with different sensing materials.

Citation Download Citation

Jung Lung Chiang, Shiun-Sheng Jan, Ying-Chung Chen, and Jung Chuan Chou "Sensing characteristics of ISFET based on AlN thin film", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392108

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