Low-temperature poly-Si TFT characteristics in the overlapped area of excimer laser long-axis scans

ShihChang Chang; ChuJung Shih; I-Min Lu; I-Wei Wu

doi:10.1117/12.389419

30 June 2000 Low-temperature poly-Si TFT characteristics in the overlapped area of excimer laser long-axis scans

ShihChang Chang, ChuJung Shih, I-Min Lu, I-Wei Wu

Proceedings Volume 4079, Display Technologies III; (2000) https://doi.org/10.1117/12.389419
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

We have investigated the laser crystallized LT poly-Si TFT characteristics in the overlapped area of excimer laser scans in the long axis direction. Continuous TFTs located at the edges of single scan and overlaps of two scans were used. Different laser energy densities were dual-scanned to study the characteristics of the TFTs in overlapped area. It was found that the laser with higher energy density dominates the TFT characteristics, and their characteristics in the overlapped area can be as good as those in the non- overlapped area. Based on these results, large uniform LT poly-Si panel can be fabricated by overlapping the laser scans in the long axis direction.

Citation Download Citation

ShihChang Chang, ChuJung Shih, I-Min Lu, and I-Wei Wu "Low-temperature poly-Si TFT characteristics in the overlapped area of excimer laser long-axis scans", Proc. SPIE 4079, Display Technologies III, (30 June 2000); https://doi.org/10.1117/12.389419

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