Fabrication and characterization of thin ferroelectric interferometers for light modulation

Kewen K. Li; Feiling Wang; Jianjun Zheng; Peter L. Pondillo

doi:10.1117/12.390495

6 July 2000 Fabrication and characterization of thin ferroelectric interferometers for light modulation

Kewen K. Li, Feiling Wang, Jianjun Zheng, Peter L. Pondillo

Proceedings Volume 4081, Optical Storage and Optical Information Processing; (2000) https://doi.org/10.1117/12.390495
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

A thin ferroelectric interferometer (TFI) structure for light modulating devices is presented. It was fabricated entirely with thin film techniques on sapphire and silicon substrates. The ferroelectric layer in this structure was the lanthanum-modified lead zirconate titanate electrooptic materia, deposited from a chemical precursor solution onto an ITO-coated dielectric mirror stack. Light intensity modulation in both transmission and reflection modes, and phase modulation in the reflection mode were demonstrated. Experimental and simulation data show that TFI devices can be fast switching with a low driving voltage. Variations of the basic TFI structure can be used for phase tunable spatial light modulators and laser beam steering devices. Design principles, fabrication procedure and the preliminary performance of the devices are described.

Citation Download Citation

Kewen K. Li, Feiling Wang, Jianjun Zheng, and Peter L. Pondillo "Fabrication and characterization of thin ferroelectric interferometers for light modulation", Proc. SPIE 4081, Optical Storage and Optical Information Processing, (6 July 2000); https://doi.org/10.1117/12.390495

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