Characteristics of CdSe thin film transistor

Yumei Jing; Ruhua Ye; Zhiming Li; Jusheng Li

doi:10.1117/12.408442

29 November 2000 Characteristics of CdSe thin film transistor

Yumei Jing, Ruhua Ye, Zhiming Li, Jusheng Li

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408442
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Cadmium selenide thin film transistors were fabricated using normal evaporation and sputtering technique in multiple pumpdown of vacuum systems. The device structure, materials of each layer and deposition conditions are depicted. Characteristics of CdSe TFTs were studied. The results indicate that stable CdSe TFTs with good characteristics can be obtained by use of simple vacuum deposition processes and adding indium thin layer in the insulator/semiconductor interface.

Citation Download Citation

Yumei Jing, Ruhua Ye, Zhiming Li, and Jusheng Li "Characteristics of CdSe thin film transistor", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408442

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