Development of SiGe/Si film heterojunction bipolar transistors

Lin Guo; Kaicheng Li; Daoguang Liu; Jing Zhang; Qiang Yi; F. Arnaud d'Avitaya; Shiliu Xu

doi:10.1117/12.408441

29 November 2000 Development of SiGe/Si film heterojunction bipolar transistors

Lin Guo, Kaicheng Li, Daoguang Liu, Jing Zhang, Qiang Yi, F. Arnaud d'Avitaya, Shiliu Xu

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408441
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

In the paper, development on MBE-based SiGe/Si heterojunction bipolar transistors (HBT) is described. The SiGe/Si film used in the present work was grown by SIVA32 molecular beam epitaxy system made in Riber, France. 3 micrometers process technology with poly-silicon emitter was used to develop SiGe HBT devices. The experimental results indicated that both the direct current characteristics and the cutoff frequency of SiGe HBT are satisfactory. The current gain (beta) of HBT devices is 50, when the collector voltage V_c equals 2V and the collector current I_c equals 5 mA. The cutoff frequency f_T equals 5.1 GH_z. And the uniformity of the cutoff frequency of HBT is quite good.

Citation Download Citation

Lin Guo, Kaicheng Li, Daoguang Liu, Jing Zhang, Qiang Yi, F. Arnaud d'Avitaya, and Shiliu Xu "Development of SiGe/Si film heterojunction bipolar transistors", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408441

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