Enhance action by introducing cesium on surface inversion layer of P-silicon

Tietun Sun; Fanying Meng; Pingfang Cheng

doi:10.1117/12.408427

29 November 2000 Enhance action by introducing cesium on surface inversion layer of P-silicon

Tietun Sun, Fanying Meng, Pingfang Cheng

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408427
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

This paper presents the carrier distribution of MIS/IL solar cell in the strong inversion condition. The variation of the surface potential Vs with the fixed positive charge density Q_s/q, energy structure and the sheet resistance have been calculated using Fermi statistics distribution. Based that, the MIS/IL solar cells are fabricated with the solar grade silicon material. Consequently, the difference of the solar cell performance before and after doping cesium is compared.

Citation Download Citation

Tietun Sun, Fanying Meng, and Pingfang Cheng "Enhance action by introducing cesium on surface inversion layer of P-silicon", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408427

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