Growth and Si-doping of GaN on GaAs(001) by MBE

Q. Huang; Hong Chen; Zhiqiang Li; Hongfei Liu; Junming Zhou

doi:10.1117/12.408461

29 November 2000 Growth and Si-doping of GaN on GaAs(001) by MBE

Q. Huang, Hong Chen, Zhiqiang Li, Hongfei Liu, Junming Zhou

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408461
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

The GaN growth and Si-doped GaN are studied in this work. By means of x-ray diffraction and photoluminescence (PL) measurements we found that the GaN sample directly grown on GaAs substrate is pure cubic phase and that grown on AlAs buffer is pure hexagonal phase. The present study shows that the phase of GaN samples grown on GaAs substrates can be controlled using different buffer layers. The PL properties of Si-doped cubic GaN with different carrier concentrations were investigated at room temperature. It was found that when the carrier concentration is increased from 5 X 10¹⁵ to 2 X 10¹⁸cm^-3, the PL peak shifted towards low energy, from 3.246 to 3.227 eV, and the PL linewidth increased from 77.1 to 121 meV. The PL peak shift is explained by the bandgap narrowing effect due to the high doping concentration. The PL linewidth includes two parts: one is doping concentration-independent, which is caused by the imperfection of samples and phonon scattering; the other is doping concentration-dependent. We assign the second part to the broadening by the microscopic fluctuation of the doping concentration. The experimental measurements are in good agreement with the model.

Citation Download Citation

Q. Huang, Hong Chen, Zhiqiang Li, Hongfei Liu, and Junming Zhou "Growth and Si-doping of GaN on GaAs(001) by MBE", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408461

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