High-power single quantum well array semiconductor lasers

Yi Qu; Baoxue Bo; Xin Gao; Baoshun Zhan; Xingde Zhang; Jiawei Shi

doi:10.1117/12.408412

29 November 2000 High-power single quantum well array semiconductor lasers

Yi Qu, Baoxue Bo, Xin Gao, Baoshun Zhan, Xingde Zhang, Jiawei Shi

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408412
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

In this paper, through the analysis and in consideration of the facts which influence on the ultimate output power of semiconductor laser, we have designed a laser structure with gradient refraction index separate confinement single quantum well (GRIN-SCH-SQW) and have grown the laser structure by MBE. Moreover we have also fabricated array lasers by broad area structure. The lasers are cleaved into cm bars and coated with high- and low-reflectivity films (approx. 95% and 5%). The QCW output power of the array laser has reached 60 W (100 microsecond(s) , 500 Hz), the peak wavelength of the device is 806 approximately 810 nm.

Citation Download Citation

Yi Qu, Baoxue Bo, Xin Gao, Baoshun Zhan, Xingde Zhang, and Jiawei Shi "High-power single quantum well array semiconductor lasers", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408412

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