Influence of oxygen incorporation on beryllium- and silicon-doped InP grown by solid source molecular beam epitaxy

Ning Xiang; Jari Likonen; Jani Turpeinen; Mika J. Saarinen; Mika Toivonen; Markus Pessa

doi:10.1117/12.408321

29 November 2000 Influence of oxygen incorporation on beryllium- and silicon-doped InP grown by solid source molecular beam epitaxy

Ning Xiang, Jari Likonen, Jani Turpeinen, Mika J. Saarinen, Mika Toivonen, Markus Pessa

Author Affiliations +

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408321
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

The effect of oxygen incorporation on electrical and optical properties of Be- and Si-doped InP grown by solid source molecular beam epitaxy has been studied. Oxygen was observed to reduce both the Be and Si doping efficiencies in InP and to introduce recombination centers that degrade the photoluminescence property. The compensation in Be-InP was more pronounced than in Si-InP. With high oxygen impurity concentration, Be-InP was found to be n-type in Hall measurements. Electrical inactivity of Be is likely due to the formation of Be-O complexes in InP. Oxygen was originated from the phosphorous source and could be reduced by employing lowered phosphorous cracker temperature.

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Ning Xiang, Jari Likonen, Jani Turpeinen, Mika J. Saarinen, Mika Toivonen, and Markus Pessa "Influence of oxygen incorporation on beryllium- and silicon-doped InP grown by solid source molecular beam epitaxy", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408321

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